Rapid Melt Growth of Single Crystal InGaAs on Si Substrates
نویسندگان
چکیده
منابع مشابه
Modelling of physical phenomena on Si melt during crystal growth process by Directional solidification method
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ژورنال
عنوان ژورنال: Advances in Materials Science and Engineering
سال: 2016
ISSN: 1687-8434,1687-8442
DOI: 10.1155/2016/7139085